个人简介：
博士，硕士生导师。主要从事二维柔性材料、二维磁性半导体、微纳电子器件和自旋电子器件等方向研究。主持湖北工业大学青年人才引进项目1项，参与国家自然科学基金项目以及其他省级、市级、国家重点实验室开放基金多项，在npj Spintronics、Nanotechnology、Applied Surface Science等国际期刊发表SCI论文多篇。
科研项目：
1、湖北工业大学人才引进项目，单层MoS2薄膜的低损伤高效可控等离子体掺杂，2022.11~2023.12, 主持；
2、企业合作项目，可穿戴新型柔性电子器件，2022.04~2023.04，主持
3、国家级重点实验室项目-开放基金，超高电光系数BaTiO3单晶薄膜的制备及温度场下电光调制特性，参与，2023.03~2024.12
4、企业合作项目，DMB+通信系统关键技术研发，参与，2023.08~2024.07
科研成果：
[1] Jingjing Lu, Yan Xu, Jingsong Cui, Peng Zhang, Chenxi Zhou, Hanuman Singh, Shuai Zhang, Long You & Jeongmin Hong, Room temperature photosensitive ferromagnetic semiconductor using MoS2. npj Spintronics, 2(1),7.2024.
[2] JingJing Lu, Zhenyu Guo, Wenzhao Wang, Jichang Lu, Yishuo Hu, Junhao Wang, Yonghong Xiao, Xiya Wang, Shibo Wang, Yufei Zhou and Xiangbin Zeng. Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping. Nanotechnology，vol. 32, no. 1, pp. 015701, 2021.
[3] Jingjing Lu, Xiya Wang, Junhao Wang, Yufei Zhou, Duo Chen, Shibo Wang, Maofa Zhang, Xiangbin Zeng. A Magentoelectric Coefficient Measurement System with a Free-Stress Sample Holder. Journal of Minerals and Materials Characterization and Engineering, vol. 8, pp, 330-340, 2020.
[4] Jingjing Lu, Changcheng Ma, Jing He, Jie Zhu, Zuoqi Hu. The enhanced electric field tunability of the microwave magnetoelectric effect in the YIG/Terfenol-D/PZT structure and its application. Physica B: Condensed Matter, vol. 566, pp. 116-120, 2019.
[5] Xinguo Ma, Huatin Bao, Xue Gong, Gang Yuan, Zhuo Peng, Jingjing Lu, Qihai Xie. Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field. Applied Surface Science, 2023, 615: 156385.
[6] Wenzhao Wang, Jichang Lu, Da Wan, Xiangbin Zeng, Jingjing Lu, Tingwei Xu, Chen Chen, Tao Zhang. Improved performance in MoS2 homogeneous junction field effect transistors by optimizing electrodes contact. Materials Science and Engineering: B, 290, 116348.
[7] Wenzhao Wang, Xiangbin Zeng, Jamie H. Warner, Zhengyu Guo, Yishuo Hu, Yang Zeng, Jingjing Lu, Wen Jin, Shibo Wang, Jichang Lu, Yirong Zeng, and Yonghong Xiao. Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure. ACS Applied Materials & Interfaces, vol. 12, no. 29, pp. 33325-33335, 2020.
[8] Wen Jin, Xiangbin Zeng, Zhenyu Guo, Yang Zeng, WenzhaoWang, Yirong Zeng, Yishuo Hu, Yonghong Xiao, Jichang Lu, Jingjing Lu and JunhaoWang, Optoelectronic properties of lateral MoS2 p-n homojunction implemented by selective p-type doping using nitrogen plasma. Journal of Physics D: Applied Physics, vol. 53, no. 40, pp. 405102, 2020.
[9] Jie Zhu, Jing He, Jingjing Lu, Changcheng Ma, Xiongfei Tao,Weizhong Liu, Zhuoming Feng, Li Chang, Yuanyuan Li, and Zuoqi Hu. Resistive Switching Characteristics of Resistive Random Access Memory Based on a BaxSr1-xTiO3 Thin Film Grown by a Hydrothermal Method. IEEE Electron Device Letters, vol. 40, no. 9, pp. 1411-1414, 2019.
[10] Changcheng Ma, Jing He, Jingjing Lu, Jie Zhu, and Zuoqi Hu. Impact of scaling on thermoelectric heating process in the reset operation of phase-change memory cells. Japanese Journal of Applied Physics, vol. 58, no.10, pp. 105003, 2019.
[11] Jing He, Jie Zhu, Changcheng Ma, Jingjing Lu, and Zuoqi Hu. Negative differential resistance and multilevel resistive switching in BaSrTiO3 films. Applied Physics Letters, vol. 115, no. 7, pp. 072101, 2019.
[12] Shaoxiong Wu, Yang Zeng, Xiangbin Zeng, Shibo Wang, Yishuo Hu, Wenzhao Wang, Sheng Yin, Guangtong Zhou, Wen Jin, Tingting Ren, Zhenyu Guo and Jingjing Lu. High-performance p-type MoS2 field-effect transistor by toroidal-magnetic-field controlled oxygen plasma doping. 2D Materials, vol. 6, pp. 025007, 2019.
